中華人民共和國國家標準(中國大陸GB標準)英文版 |
GB標準是中華人民共和國國家標準,也叫GB國標,是中國大陸強制執行的國家標準,所有中國大陸境內銷售的商品及提供服務都必須符合GB國家標準的要求,包括進口商品及服務; 本網站提供GB國家標準的查詢檢索,英文版翻譯,GB標準產品檢測檢驗及合規性分析服務; |
GB/T 17562.8-2002 频率低于3 MHz的矩形连接器 第8部分:具有4个信号接触件和电缆屏蔽用接地接触件的连接器详细规范(中英文版) Rectangular connectors for frequencies below 3MHz--Part 8:Detail specification for connectors,four-signal contacts and earthing contacts for cable screen |
|||
GB/T 18904.2-2002 半导体器件 第12-2部分:光电子器件 纤维光学系统或子系统用带尾纤的激光二极管模块空白详细规范(中英文版) Semiconductor devices--Part 12-2:Optoelectronic devices--Blank detail specification for laser diodes modules with pigtail for fiber optic systems or sub-systems |
|||
SJ/T 11280-2002 电子元器件详细规范 mys4、mys5、mys6、mys8防雷指示型过电压保护器 评定水平e(中英文版) Detail specifications of electronic and element device for lightning surge protective device with fault-indication of type MYS4, MYS5, MYS6, MYS8 Assessment level E |
|||
SJ 50033/161-2002 半导体分立器件 2cw210-251型硅电压调整二极管详细规范(中英文版) Semiconductor discrete device. Detail specification for silicon voltage-regulator diode for type 2CW210~251 |
|||
SJ 50918/4-2002 wj13型螺杆驱动非线绕预调电位器详细规范(中英文版) Potentiometers, preset, non-wirewound, lead-screw actuated, style WJ13, detail specification for |
|||
SJ 50033/155-2002 半导体分立器件 3dg252型硅微波线性晶体管详细规范(中英文版) Semiconductor discrete devices. Detail specification for type 3DG252 sillcon microwave linearity transistor |
|||
SJ 50033/154-2002 半导体分立器件 3dg251型硅超高频低噪声晶体管详细规范(中英文版) Semiconductor discrete devices. Detail specification for type 3DG251 silicon UHF low-noise transistor |
|||
SJ 50033/153-2002 半导体分立器件 2ck141型微波开关二极管详细规范(中英文版) Semiconductor discrete devices. Detail specification for type 2CK141 microwave switch diode |
|||
SJ 50033/152-2002 半导体分立器件 2ck140型微波开关二极管详细规范(中英文版) Semiconductor discrete devices. Detail specification for type 2CK140 microwave switch diode |
|||
SJ 50033/151-2002 半导体分立器件 2dw14-18型低噪声硅电压基准二极管详细规范(中英文版) Semiconductor discrete device. Detail specification for low-noise silicon voltage-regulator diodes for types 2DW14~18 |
|||
SJ 50033/150-2002 半导体分立器件 2dw230-236型硅电压基准二极管详细规范(中英文版) Semiconductor discrete device. Detail specification for silicon voltage-regulator diode for type 2DW230~236 |
|||
SJ 20848-2002 钼铜合金棒规范(中英文版) Specification for molybdenum-copper composite materials bar |
|||
SJ 20846-2002 电镀用氰化亚金钾规范(中英文版) Specification for gold [Ⅰ] potassium cyanide for electroplating |
|||
SJ 20643.2-2002 紫外切除型脉冲氙灯详细规范(中英文版) Detail specification for pulsed xenon lamp for ultraviolet - cut |
|||
SJ 50033/156-2002 半导体分立器件 3da505型硅微波脉冲功率晶体管详细规范(中英文版) Semiconductor discrete devices. Detail specification for type 3DA505 silicon microwave pulse power transistor |
|||
SJ 53930/1-2002 半导体光电子器件gr8813型红外发射二极管详细规范(中英文版) Semiconductor optoelectronic devices detail specification for type GR8813 infrared emitting diode |
|||
SJ 20830-2002 铂硅红外焦平面探测器杜瓦组件通用规范(中英文版) General specification for PtSi infrared focal plane arrays detector-dewar assembly |
|||
SJ 50918/3-2002 wj56型旋转非线绕预调电位器详细规范(中英文版) Potentiometers, preset, non-wirewound, rotary, style WJ56, detail specification for |
|||
SJ 52821/1-2002 j110sy241型悄磁直流伺服电动机详细规范(中英文版) Servo motor, d.c.permanent magnet, type J110SY241, detail specification for |
|||
SJ 51515/4-2002 jgx-0602m型密封直流固体继电器详细规范(中英文版) Relays, d.c.solid state, hermetically sealed, model JGX-0602M, detail specification for |
找到:3462條目 | [首頁]-[上一頁]-[下一頁]-[尾頁] | 去到: [102] [103] [104] [105] [106] [107] [108] |